au.\*:("HOLMSTROM RP")
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COMPLETE DIELECTRIC ISOLATION BY HIGHLY SELECTIVE AND SELF-STOPPING FORMATION OF OXIDIZED POROUS SILICONHOLMSTROM RP; CHI JY.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 386-388; BIBL. 14 REF.Article
CONVERSION OF THE CONDUCTIVITY MODE IN SILICON BY OXYGEN ION IMPLANTATION AND ITS APPLICATION IN A NOVEL DIELECTRIC ISOLATION TECHNIQUECHI JY; HOLMSTROM RP; MAO BY et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 420-422; BIBL. 14 REF.Article
ELECTRON BEAM-INDUCED DECOMPOSITION AND DESORPTION ZNOHOLMSTROM RP; LAGOWSKI J; GATOS HC et al.1978; SURF. SCI.; NLD; DA. 1978; VOL. 75; NO 4; PP. L781-L785; BIBL. 10 REF.Article